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| MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 20 21.5 BvP EvP 21.5 17.5 2-5.5 1.65 Fig. 1 8 6.35 Fig. 2 3.8 2.8 1.2 BuP EuP P BwP EwP 18 45 21 U N BuN EuN V W 30 7.95 BvN EvN BwN EwN 93 Tab#110, t=0.5(Fig. 2) Tab#250, t=0.8(Fig. 1) P BuP EuP BvP EvP U V BvN EvN BwP EwP W BwN EwN 28.2 7.5 LABEL 17.5 BuN EuN N Note: All Transistor Units are 3-Stage Darlingtons. 1 7.5 14 7.5 14 7.5 16 3.4 1 5.5 7.1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 230 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=30A, IB1=60mA, IB2=-0.6A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 60 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.5 2.0 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C COLLECTOR CURRENT IC (A) 80 60 IB=0.5A A IB=200m A IB=100m IB=20mA DC CURRENT GAIN hFE VCE=5.0V 40 VCE=2.5V 20 IB=10mA 0 0 1 2 3 4 5 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.2 2.6 3.0 3.4 3.8 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 4.2 10 0 VCE(sat) 7 5 4 3 IB=40mA 2 Tj=25C Tj=125C 10-1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 ts tf 3 IC=30A 2 IC=20A IC=10A SWITCHING TIME ton, ts, tf (s) 1 VCC=300V IB1=60mA IB2=-0.6A ton 2 3 4 5 7 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 10-1 10 0 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10-1 REVERSE BIAS SAFE OPERATING AREA 80 Tj=125C COLLECTOR CURRENT IC (A) ts, tf (s) ts tf 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 800 IB2=-3.0A IB2=-0.6A SWITCHING TIME VCC=300V IB1=60mA IC=30A Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 10 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 0 S 50 0 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 10 2 0.5 0.4 D C 1m S S 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 10 0 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr 10 2 VCC=300V IB1=60mA IB2=-0.6A 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 Qrr 10 0 7 5 3 trr Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) |
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